{"id":69,"date":"2023-07-25T12:37:31","date_gmt":"2023-07-25T10:37:31","guid":{"rendered":"http:\/\/wp.mhoheisel.de\/?page_id=69"},"modified":"2023-07-25T14:10:26","modified_gmt":"2023-07-25T12:10:26","slug":"lebenslauf","status":"publish","type":"page","link":"https:\/\/wp.mhoheisel.de\/index.php\/lebenslauf\/","title":{"rendered":"Lebenslauf"},"content":{"rendered":"\n
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1954<\/td>geboren in K\u00f6ln<\/a><\/td><\/tr>
1960<\/td>Grundschule in Kornwestheim<\/a> an der Schiller-Schule<\/a><\/td><\/tr>
1964<\/td>Gymnasium am Ernst-Sigle-Gymnasium<\/a><\/td><\/tr>
1972<\/td>Abitur in Bocholt<\/a> am st\u00e4dtischen St.-Georg-Gymnasium<\/a><\/td><\/tr>
1972<\/td>Studium der Physik in Marburg<\/a> an der Philipps-Universit\u00e4t Marburg<\/a><\/td><\/tr>
1979<\/td>Diplomarbeit am Fachbereich Physik der Universit\u00e4t Marburg<\/a>
Physik-Diplom bei Prof. Dr. F. W. Richter:
“Zur Positronenvernichtung in d\u00fcnnen Schichten”<\/td><\/tr>
1984<\/td>Promotion in der AG Halbleiter<\/a>
Dissertation bei Prof. Dr. W. Fuhs:
“Station\u00e4re und nichtstation\u00e4re Photoleitung von amorphem Silizium<\/a>“<\/td><\/tr>
1984<\/td>Siemens Zentralabteilung Forschung und Entwicklung in M\u00fcnchen Perlach<\/td><\/tr>
1991<\/td>Siemens Medizintechnik in Erlangen<\/td><\/tr>
2003<\/td>Siemens Healthcare in Forchheim<\/td><\/tr>
2015 bis 2016<\/td>Siemens Healthcare GmbH in Forchheim<\/td><\/tr><\/tbody><\/table><\/figure>\n<\/div>\n\n\n\n
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Martin Hoheisel<\/figcaption><\/figure>\n<\/div><\/figure>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"

1954 geboren in K\u00f6ln 1960 Grundschule in Kornwestheim an der Schiller-Schule 1964 Gymnasium am Ernst-Sigle-Gymnasium 1972 Abitur in Bocholt am st\u00e4dtischen St.-Georg-Gymnasium 1972 Studium der Physik in Marburg an der Philipps-Universit\u00e4t Marburg 1979 Diplomarbeit am Fachbereich Physik der Universit\u00e4t MarburgPhysik-Diplom bei Prof. Dr. F. W. Richter:“Zur Positronenvernichtung in d\u00fcnnen Schichten” 1984 Promotion in der AG<\/p><\/div>\n

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